Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry

Sharan, Neha and Mahapatra, Santanu (2013) Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry. In: IEEE Transactions on Electron Devices, 60 (7). pp. 2419-2422.

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Abstract

With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQS model shows good agreement against TCAD simulations and appears to be useful for efficient circuit simulation.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE-Inst Electrical Electronics Engineers Inc
Additional Information:	Copyright of this article belongs to IEEE-Inst Electrical Electronics Engineers Inc.
Keywords:	Compact Modeling; Double-Gate (DG) MOSFET; Nonquasi-Static (NQS) Effect
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	03 Sep 2013 06:33
Last Modified:	03 Sep 2013 06:33
URI:	http://eprints.iisc.ac.in/id/eprint/46962

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