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Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide

Roul, B and Singh, DK and Chowdhury, AM and Kumari, M and Kumawat, KL and Nanda, KK and Krupanidhi, SB (2022) Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4355-4361.

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Official URL: https://doi.org/10.1109/TED.2022.3182283


Silicon-based conventional photodetectors have always been a vital part of many electronic and optoelectronic circuits because of their low fabrication cost, high device performance, and simple configuration. However, due to the relatively poor light–matter interaction and narrow bandgap in Si, these photodetectors generally suffer from a certain compromise in their photoresponsivity as well as broadband photoresponse. Here, a novel approach of coupling reduced-graphene oxide (rGO) decorated β-In2S3 with Si has been demonstrated. β-In2S3 thin film has been grown by a direct and transfer-free method on Si substrate and rGO has been drop-casted on β-In2S3. This introduction of a double-heterojunction architecture results in a photoresponsivity of ∼30.41 A/W at 625 nm at an applied voltage of −4 V with the response and recovery times of 60 and 40 μs, respectively, along with a broadband response in the wavelength range of 400–1200 nm. The rGO acts as an efficient hole transporting layer, which readily reduces the recombination of the photogenerated electrons and holes, leading to high photoresponse. These results highlight a simple and cost-effective strategy to construct high-performance broadband photodetectors, which can be useful in future optoelectronic devices.

Item Type: Journal Article
Publication: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Absorption spectroscopy; Graphene; Indium; Indium compounds; Photons; Silicon; Substrates; X ray absorption, 2-D material; <inline-formula xmlns:ali=""; > <tex-math notation=""LaTeX"">β </tex-math> </inline-formula>-in<inline-formula xmlns:ali=""; > <tex-math notation=""LaTeX"">\text2</tex-math> </inline-formula>S<inline-formula xmlns:ali=""; > <tex-math notation=""LaTeX"">\text3</tex-math> </inline-formula>; Broadband Communication; Broadband photodetector; Reduced graphene oxides; Reduced-graphene oxide; Xmlns:mml=""; Xmlns:xlink=""; Xmlns:xsi="", Photodetectors
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 06 Oct 2022 10:05
Last Modified: 06 Oct 2022 10:05
URI: https://eprints.iisc.ac.in/id/eprint/77198

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