Effect of a linear potential variation on the gate of an FET

Vishwanatha, KV and Satyam, M (1979) Effect of a linear potential variation on the gate of an FET. In: IEEE Transactions on Electron Devices, 26 (7). pp. 1102-1103.

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Abstract

This correspondence aims at reporting the results of an analysis carried out to find the effect of a linear potential variation on the gate of an FET.

Item Type:	Editorials/Short Communications
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE
Additional Information:	Copyright1979 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	20 Oct 2010 06:46
Last Modified:	20 Oct 2010 06:46
URI:	http://eprints.iisc.ac.in/id/eprint/33296

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