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Large-Signal Model for Independent DG MOSFET

Thakur, Pankaj Kumar and Mahapatra, Santanu (2011) Large-Signal Model for Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (1). pp. 46-52.

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In this paper, we show the limitations of the traditional charge linearization techniques for modeling terminal charges of the independent double-gate metal-oxide-semiconductor field-effect transistors. Based on our recent computationally efficient Poisson solution for independent double gate transistors, we propose a new charge linearization technique to model the terminal charges and transcapacitances. We report two different types of quasistatic large-signal models for the long-channel device. In the first type, the terminal charges are expressed as closed-form functions of the source- and drain-end inversion charge densities and found to be accurate when the potential distribution at source end of the channel is hyperbolic in nature. The second type, which is found to be accurate in all regimes of operations, is based on the quadratic spline collocation technique and requires the input voltage equation to be solved two more times, apart from the source and drain ends.

Item Type: Journal Article
Publication: IEEE Transactions on Electron Devices
Publisher: IEEE
Additional Information: Copyright 2011 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Charge linearization; compact modeling; independent double-gate metal-oxide-semiconductor field-effect transistors (IDG MOSFETs); terminal charge; transcapacitance
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 23 Mar 2011 09:55
Last Modified: 23 Mar 2011 09:55
URI: http://eprints.iisc.ac.in/id/eprint/36201

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