Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate

Niranjan, S and Muralidharan, R and Sen, P and Nath, DN (2022) Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4212-4217.

PDF IEEE_tra_ele_dev_69-8_4212-4217_2022.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in this work can be easily scaled-up to wafer level and involves a relatively simple process of epoxy bonding of the thin device layer onto the Kapton substrate. Electrical characteristics of the flexible HEMT indicate 5-10 higher ON-current when bent with a radius of curvature of 2.1 cm (at low drain bias voltages), while the OFF-state performance remains unaffected. Initially, 2-DEG properties such as field-effect mobility and carrier concentration have been extracted. While FATFET measurements indicate negligible change in field-effect mobility, C - V measurements indicate sim 10 reduction in 2-DEG concentration after transfer. The comparison of the electrical characteristics of Au-free HEMTs indicates sim 50 reduction in the ON-current of the transferred devices. This is attributed to heating of the transistor channel caused due to low thermal conductivity of the polymer Kapton tape. Electrical characteristics of the flexible HEMT carried out under drain pulsing further support the above observation. This work is among one of the few reports on Au-free AlGaN/GaN HEMT operation on flexible Kapton tape. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Carrier concentration; CMOS integrated circuits; Drain current; Electron mobility; Energy gap; Flexible electronics; Gallium nitride; High electron mobility transistors; III-V semiconductors; Silicon wafers; Wafer bonding; Wide band gap semiconductors, AlGaN/GaN high electron mobility transistors; AlGaN/GaN high-electron mobility transistor; Au free; Au-free process; CMOS compatibility; Electrical characteristic; High electron-mobility transistors; Kapton; Performances evaluation; Wide-band-gap semiconductor, Substrates
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	06 Oct 2022 10:00
Last Modified:	06 Oct 2022 10:00
URI:	https://eprints.iisc.ac.in/id/eprint/77197

Actions (login required)

View Item