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Number of items: 27.

Gautam, SK and Variar, HB and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) 3D Approaches to Engineer Holding Voltage of SCR. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Kumar, J and Kuruva, H and Variar, HB and Patbhaje, U and Shrivastava, M (2023) Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Rai, AK and Variar, HB and Shrivastava, M (2023) Circuit Reliability of MoS_2 Channel Based 2D Transistors. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Variar, HB and Gautam, SK and Kumar, A and Amogh, KM and Luo, J and Shi, N and Marreiro, D and Mallikarjunaswamy, S and Shrivastava, M (2023) Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Mishra, A and Kumar, BS and Monishmurali, M and Suzaad, SA and Kumar, S and Sanjay, KP and Singh, AK and Gupta, A and Shrivastava, M (2023) Extremely Large Breakdown to Snapback Voltage Offset (V_t1 > > V_BD): Another Way to Improve ESD Resilience of LDMOS Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2023) Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Jatin, J and Monishmurali, M and Shrivastava, M (2023) Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Verma, R and Patbhaje, U and Kumar, J and Rai, AK and Shrivastava, M (2023) OFF State Reliability Challenges of Monolayer WS2FET Photodetector: Impact on the Dark and Photo-Illuminated State. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Raj, H and Joshi, V and Chaudhuri, RR and Malik, RR and Shrivastava, M (2023) Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3Based Vertical Schottky Barrier Diodes. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2023) Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Patbhaje, U and Verma, R and Kumar, J and Ansh, A and Shrivastava, M (2023) Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2FETs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2022) Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. In: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 27 March 2022 through 31 March 2022, Dallas, 6C11-6C16.

Monishmurali, M and Shrivastava, M (2021) A Novel High Voltage Drain Extended FinFET SCR for SoC Applications. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey, Virtual.

Monishmurali, M and Shrivastava, M (2021) Peculiar Current Instabilities Failure Mechanism in Vertically Stacked Nanosheet ggN-FET. In: 2021 IEEE International Reliability Physics Symposium, IRPS 2021, 21-24 Mar 2021, Monterey.

Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

Monishmurali, M and Paul, M and Shrivastava, M (2020) Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.

Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.

Kumar, J and Ansh, K and Yadav, A and Singh, A and Naclerio, A and Zakharov, D and Kidambi, P and Shrivastava, M (2020) Physical Insights into Phosphorene Transistor Degradation under Exposure to Atmospheric Conditions and Electrical Stress. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May, 2020, Virtual, Online; United States.

Dutta Gupta, S and Joshi, V and Shankar, B and Shikha, S and Raghavan, S and Shrivastava, M (2019) UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

Karmel Kranthi, N and Salman, A and Boselli, G and Shrivastava, M (2019) Current Filament Dynamics under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

Karmel Kranthi, N and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2019) Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

This list was generated on Wed Jun 19 00:31:42 2024 IST.