UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities

Dutta Gupta, S and Joshi, V and Shankar, B and Shikha, S and Raghavan, S and Shrivastava, M (2019) UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

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Abstract

This work demonstrates UV assisted probing of deep level traps in dielectric/GaN interface. The deep level donor traps lead to threshold voltage and gate leakage instabilities in GaN MISHEMTs. While UV exposure excites the deep traps, gate bias can sweep the trap energy state and trigger de-trapping. The recovery transient is evaluated to study the trap time constant. Besides, this work reveals a non-destructive technique to probe intrinsic traps as the UV exposure does not change the trap density across the device.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Electric excitation; Gallium nitride; High electron mobility transistors; III-V semiconductors; Nondestructive examination; Threshold voltage, Deep level trap; Dielectric characterization; GaN HEMTs; Gate leakages; Interface traps; Non-destructive technique; Recovery transients; Threshold-voltage instabilities, Computer circuits
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	27 Dec 2022 04:53
Last Modified:	27 Dec 2022 04:53
URI:	https://eprints.iisc.ac.in/id/eprint/78563

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