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Mathew, S and Bhat, KN and Nithin, N and Rao, R (2023) Design of Dual-Material Gate Junctionless FinFET based on the Properties of Materials Forming Gate Electrode. In: IETE Journal of Research .
Mathew, S and Bhat, KN and Nithin, N and Rao, R (2023) Performance Enhancement of Dual Material Gate Junctionless FinFETs using Dielectric Spacer. In: IETE Journal of Research .
Subhani, KN and Khandare, S and N, V and Bhat, KN (2022) Localized suspended micro-heater structure using dry etching for sensing and actuation application. In: Journal of Manufacturing Processes, 83 . pp. 281-289.
Sharma, A and Bhargav, G and Kaushal, A and Bhat, KN and Ghosh, A (2021) Direct laser writing on silicon surface for large area nanoplasmonic devices. In: Novel Patterning Technologies 2021, 22-26 Feb 2021.
Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .
Rana, V and Gangwar, P and Meena, JS and Ramesh, AK and Bhat, KN and Das, S and Singh, P (2020) A highly sensitive wearable flexible strain sensor based on polycrystalline MoS2thin film. In: Nanotechnology, 31 (38).
Nittala, PVK and Sen, P and Bhat, KN and Nayak, MM Patrikar, Rajendra M, ed (2020) 3D packaging for the integration of heterogeneous systems. Institution of Engineering and Technology, pp. 323-370.
Subhani, KN and Khandare, S and Biradar, RC and Bhat, KN (2020) Novel fabrication of fixed suspended silicon nitride structure for MEMS devices with dry etching. In: IOP Conference Series: Materials Science and Engineering, 2nd International Conference on Materials Science and Manufacturing Technology 2020, ICMSMT 2020, 9-10 April 2020, Hotel AloftCoimbatore, Tamil Nadu; India.
Nittala, PVK and Sahoo, K and Bhat, N and Bhat, KN and Sen, P (2019) Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1153-1159.
Deshpande, Preeti and Vilayurganapathy, Subramanian and Bhat, KN and Ghosh, Ambarish (2019) Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 125 (3).
Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.
Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).
Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.
Rana, Vaibhav and Bhat, KN and Das, Samaresh and Saxena, Kshitij and Dhanekar, Saakshi and Singh, Pushpapraj (2017) Low-cost and reliable nanowire fabrication method for ultrasensitive pressure sensor. In: 16th IEEE SENSORS CONFERENCE, OCT 29-NOV 01, 2017, Glasgow, SCOTLAND, pp. 211-213.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.
Sharma, Akshdeep and Suma, BN and Bhat, KN and Naik, AK (2017) Gallium-Doped Piezoresistive Sensor With Optimized Focused Ion Beam Implantation. In: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 26 (1). pp. 127-134.
Gangavarapu, Yasasvi PR and Lokesh, Punith C and Bhat, KN and Naik, AK (2017) Graphene Electrodes as Barrier-Free Contacts for Carbon Nanotube Field-Effect Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4335-4339.
Chandrasekar, Hareesh and Bhat, KN and Rangarajan, Muralidharan and Raghavan, Srinivasan and Bhat, Navakanta (2017) Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces. In: SCIENTIFIC REPORTS, 7 .
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2016) Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs. In: MICROELECTRONICS JOURNAL, 55 . pp. 143-151.
Bhat, KN (2016) SPECIAL ISSUE INTRODUCTION 2nd IEEE International Conference on Emerging Electronics (ICEE). In: IETE TECHNICAL REVIEW, 33 (1, SI). p. 1.
Gangavarapu, Yasasvi PR and Lokesh, Punith Chikkahalli and Bhat, KN and Naik, AK (2016) Towards Barrier Free Contacts to n-type CNTFETs using Graphene Electrodes. In: 11th IEEE Nanotechnology Materials and Devices Conference (NMDC), OCT 09-12, 2016, Toulouse, FRANCE.
Kumar, Vijay and Puri, Paridhi and Nain, Shivani and Bhat, KN and Sharma, NN (2015) Self assembled monolayers of Octadecyltrichlorosilane for dielectric materials. In: 2nd International Conference on Emerging Technologies - Micro to Nano (ETMN), OCT 24-25, 2015, Manipal Univ, Jaipur, INDIA.
Kumar, Vijay and Bhat, KN and Sharma, Niti Nipun (2014) Surface modification of textured silicon and its wetting behaviour. In: JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY, 29 (4). pp. 308-318. (In Press)
Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2013) Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET). In: JOURNAL OF APPLIED PHYSICS, 114 (1).
Sridharan, Sindhuja and Bhat, Navakanta and Bhat, KN (2013) Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching. In: APPLIED PHYSICS LETTERS, 102 (2).
Daniel, Joseph R and Bhat, KN (2013) Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results. In: MICROELECTRONIC ENGINEERING, 103 . pp. 79-85.
Murali, Pramod and Ranjit, K and Bhat, Navakanta and Banerjee, Gaurab and Amrutur, Bharadwaj and Bhat, KN and Ramamurthy, Praveen C (2012) A CMOS Gas Sensor Array Platform With Fourier Transform Based Impedance Spectroscopy. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 59 (11). pp. 2507-2517.
Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2012) Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor. In: Journal of Applied Physics, 112 (2).
Medury, Aditya Sankar and Bhat, Navakanta and Bhat, KN (2011) Temperature dependence of threshold voltage for ultra thin silicon film symmetric double-gate MOSFETs. In: International Workshop on Physics of Semiconductor Devices, 19-22 Dec, 2011, Indian Institute of Technology Kanpur.
Thathachary, Arun V and Bhat, KN and Bhat, Navakanta and Hegde, MS (2010) Fermi level depinning at the germanium Schottky interface through sulfur passivation. In: Applied Physics Letters, 96 (15).
Medury, AdityaSankar and Majumdar, Kausik and Bhat, Navakanta and Bhat, KN (2010) A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs. In: 3rd IEEE International Nanoelectronics Conference, JAN 03-08, 2010 , City Univ Hong Kong, pp. 1134-1135.
Anand, S and Bhat, Navakanta and Bhat, KN and Mohan, S (2009) A Surface Modification Process for Lift-Off Applications using Direct Write Laser Lithography. In: Proc. of International Conference on MEMS 2009 .
Babu, Naseer P and Govind, G and Prasad, SMS and Bhat, KN (2007) Electrical and Reliability Studies of "Wet $N_2O$" Tunnel Oxides Grown on Silicon for Flash Memory Applications. In: IEEE Transactions on Device and Materials Reliability, 7 (3). pp. 420-428.
Bhat, KN and Gupta, Das A and Rao, PRS and Gupta, Das N and Bhattacharya, E and Sivakumar, K and Kumar, Vinoth V and Anitha, Helen L and Joseph, JD and Madhavi, SP and Natarajan, K (2007) Wafer bonding - A powerful tool for MEMS. In: Indian Journal of Pure and Applied Physics, 45 (4). pp. 311-316.
Bhat, KN and Naseer, Babu P (2007) 'Wet N2O oxidation' process and interface state density characterization of nanoscale nitrided SiO2 for flash memory application. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.
