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Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices

Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .

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Official URL: https://doi.org/10.1016/j.sse.2021.108188


In this work, we have investigated the material properties of PECVD (Plasma Enhanced Chemical Vapor Deposition) amorphous Silicon nitride (SiN) films and the influence of deposition conditions on gate-leakage increase of AlGaN/GaN HEMT's (High Electron Mobility Transistor) after passivation. We have studied the effect of gas flow ratio (SiH4/NH3) on the structural and compositional properties of SiNx deposited on crystalline Silicon (Si). Based on the inference, electrical properties of the SiNx films were examined by depositing on AlGaN/GaN HEMT as a passivation layer. The optimized SiNx which is N-rich with a refractive index of 1.83, tensile stress of 681 MPa and NH3/SiH4 ratio of 18 shows only a 1.2x variation in gate leakage, 1.4x increase in gm, minimum left shift of 0.03 V in Vth and 1.26x increase Ion/Ioff ratio after passivation. We believe that the 3x reduction in Si-H bonds resulting in reduced interface traps at SiN/AlGaN interface is the reason for the minimal increase in gate leakage after passivation. © 2021 Elsevier Ltd

Item Type: Journal Article
Publication: Solid-State Electronics
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Elsevier Ltd
Keywords: Aluminum gallium nitride; Ammonia; Amorphous silicon; Electron mobility; Flow of gases; Gallium nitride; High electron mobility transistors; III-V semiconductors; Passivation; Plasma CVD; Plasma enhanced chemical vapor deposition; Refractive index, AlGaN/GaN high electron mobility transistor; AlGaN/GaN high electron mobility transistors; Amorphous silicon nitride; Compositional properties; Crystalline silicons; Deposition conditions; Gas-flow ratio; Gate-leakage; On-off ratio; Silicon Nitride Film, Silicon nitride
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 03 Dec 2021 08:44
Last Modified: 03 Dec 2021 08:44
URI: http://eprints.iisc.ac.in/id/eprint/70605

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