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A highly sensitive wearable flexible strain sensor based on polycrystalline MoS2thin film

Rana, V and Gangwar, P and Meena, JS and Ramesh, AK and Bhat, KN and Das, S and Singh, P (2020) A highly sensitive wearable flexible strain sensor based on polycrystalline MoS2thin film. In: Nanotechnology, 31 (38).

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Official URL: https://doi.org/10.1088/1361-6528/ab9970


The present study investigates the piezoresistive properties of polycrystalline MoS2 film for strain-sensing applications. The gauge factor (GF) of the flexible MoS2 device (MoS2/PET) has been calculated to be 102 ± 5 in the stress range from �7 MPa to �14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8. The effect of encapsulation layer thickness is reflected in the GF, which is attributed to the shifting of the neutral axis. However, the calculated GF is constant in the higher stress range, 80 ± 2 and 12 ± 1 for 2 μm and 10 μm thick SU-8, respectively. Herein, we report a cost-effective and scalable approach to fabricate large-area polycrystalline MoS2-based flexible sensors for a wider stress range. The encapsulated devices remained undistorted and intact for stress values beyond 14 MPa. Further, we demonstrate the durability of the fabricated sensors with body movements, such as hand gestures, for all the three types of strain sensor. © 2020 IOP Publishing Ltd.

Item Type: Journal Article
Publication: Nanotechnology
Publisher: Institute of Physics Publishing
Additional Information: Copyright for this article belongs to Institute of Physics Publishing.
Keywords: Cost effectiveness; Layered semiconductors; Molybdenum compounds, Body movements; Cost effective; Effect of encapsulation; Fabricated sensors; Flexible sensor; Piezoresistive properties; Polycrystalline; Scalable approach, Wearable sensors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 12 Nov 2021 09:37
Last Modified: 12 Nov 2021 09:37
URI: http://eprints.iisc.ac.in/id/eprint/66143

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