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Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results

Daniel, Joseph R and Bhat, KN (2013) Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results. In: MICROELECTRONIC ENGINEERING, 103 . pp. 79-85.

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Official URL: http://dx.doi.org/10.1016/j.mee.2012.10.003


In this paper, a simple but accurate semi analytical charge sheet model is presented for threshold voltage of accumulation mode polycrystalline silicon on insulator (PSOI) MOSFETs. In this model, we define the threshold voltage (V-T) of the polysilicon accumulation mode MOSFET as the gate voltage required to raise the surface potential (phi(s)) to a value phi(sT) necessary to overcome the charge trapping in the grain boundary and to create channel accumulation charge that is equal to the channel accumulation charge available in the case of single crystal silicon accumulation mode MOSFET at that phi(sT). The correctness of the model is demonstrated by comparing the theoretically estimated values of threshold voltage with the experimentally measured threshold voltages on the accumulation mode PSOI MOSFETs fabricated in the laboratory using LPCVD polysilicon layers doped with boron to achieve dopant densities in the range 3.3 x 10(-15)-5 x 10(17)/cm(3). Further, it is shown that the threshold voltage values of accumulation mode PSOI MOSFETs predicted by the present model match very closely with the experimental results, better than those obtained with the models previously reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to ELSEVIER SCIENCE BV, NETHERLANDS
Keywords: Accumulation mode PSOI MOSFETs;Threshold voltage model;Effective doping concentration;Grain boundary trap density;Levinson method
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 14 Mar 2013 09:47
Last Modified: 14 Mar 2013 09:47
URI: http://eprints.iisc.ac.in/id/eprint/45989

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