Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET)

Medury, Aditya Sankar and Bhat, KN and Bhat, Navakanta (2013) Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET). In: JOURNAL OF APPLIED PHYSICS, 114 (1).

PDF jou_app_phy_2013...pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright of this article is belongs AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	24 Sep 2013 08:38
Last Modified:	24 Sep 2013 08:38
URI:	http://eprints.iisc.ac.in/id/eprint/47305

Actions (login required)

View Item