Temperature dependence of threshold voltage for ultra thin silicon film symmetric double-gate MOSFETs

Medury, Aditya Sankar and Bhat, Navakanta and Bhat, KN (2011) Temperature dependence of threshold voltage for ultra thin silicon film symmetric double-gate MOSFETs. In: International Workshop on Physics of Semiconductor Devices, 19-22 Dec, 2011, Indian Institute of Technology Kanpur.

Full text not available from this repository. (Request a copy)

Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	Copyright of this article belongs to IEEE.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	22 Mar 2013 07:32
Last Modified:	22 Mar 2013 07:32
URI:	http://eprints.iisc.ac.in/id/eprint/46094

Actions (login required)

View Item