(Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate

Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.

PDF ECS-SMEQ_AiMES 2018_86-10_161-168_2018.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

Atlas silvaco simulation has been performed to explore the effectiveness of buried channel architecture on AlGaN/GaN HEMTs for normally-off operation. The buried channel operation is achieved by adding a p-n junction in the GaN buffer. Thicknesses and doping concentration of the p-type and n-type region are optimized for the formation of the conduction channel away from the gate oxide-GaN interface, thereby reducing interface scattering and enhancing the field effect mobility. Bener breakdown voltage is also demonstrated for buried channel device owing to the presence of p-n junction depletion region in the buffer. Three times increase in the on current and four orders of magnitude reduction in the off state leakage current are demonstrated for the buried channel device compared to a reference device. HEMT devices are experimentally realized on an optimized GaN stack on Si and excellent agreements with simulation results are demonstrated.

Item Type:	Conference Paper
Publication:	ECS Transactions
Publisher:	Electrochemical Society Inc.
Additional Information:	The copyright for this article belongs to the Electrochemical Society Inc.
Keywords:	Aluminum gallium nitride; High electron mobility transistors; III-V semiconductors; Semiconductor doping; Semiconductor junctions; Silicon; Wide band gap semiconductors, Design optimization; Doping concentration; Field-effect mobilities; Interface scattering; Off-state leakage current; Orders of magnitude; Silicon substrates; Silvaco simulation, Gallium nitride
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	19 Aug 2022 05:17
Last Modified:	19 Aug 2022 05:17
URI:	https://eprints.iisc.ac.in/id/eprint/75979

Actions (login required)

View Item