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Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Chandrasekar, Hareesh and Bhat, KN and Rangarajan, Muralidharan and Raghavan, Srinivasan and Bhat, Navakanta (2017) Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces. In: SCIENTIFIC REPORTS, 7 .

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Official URL: http://doi.org/10.1038/s41598-017-16114-w


The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are however, not well understood. We report on a pronounced thickness dependence of the parasitic channel formation at AlN/Si interfaces due to increased surface acceptor densities at the interface in silicon. The origin of these surface acceptors is analyzed using secondary ion mass spectroscopy measurements and traced to thermal acceptor formation due to Si-O-N complexes. Low-temperature (5 K) magneto-resistance (MR) data reveals a transition from positive to negative MR with increasing AlN film thickness indicating the presence of an inversion layer of electrons which also contributes to parasitic channel formation but whose contribution is secondary at room temperatures.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 01 Dec 2017 06:57
Last Modified: 25 Feb 2019 11:20
URI: http://eprints.iisc.ac.in/id/eprint/58338

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