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A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs

Medury, AdityaSankar and Majumdar, Kausik and Bhat, Navakanta and Bhat, KN (2010) A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs. In: 3rd IEEE International Nanoelectronics Conference, JAN 03-08, 2010 , City Univ Hong Kong, pp. 1134-1135.

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We propose a compact model which predicts the channel charge density and the drain current which match quite closely with the numerical solution obtained from the Full-Band structure approach. We show that, with this compact model, the channel charge density can be predicted by taking the capacitance based on the physical oxide thickness, as opposed to C-eff, which needs to be taken when using the classical solution.

Item Type: Conference Paper
Publisher: IEEE
Additional Information: Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 19 Oct 2010 07:24
Last Modified: 19 Oct 2010 07:24
URI: http://eprints.iisc.ac.in/id/eprint/33285

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