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Khan, MA and Muralidharan, R and Chandrasekar, H (2023) Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs. In: Semiconductor Science and Technology, 38 (3).

Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).

Ravindra, P and Chaudhary, R and Athresh, E and Vura, S and Raghavan, S and Ranjan, R and Majumdar, K and Avasthi, S (2021) Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate. In: Semiconductor Science and Technology, 36 (5).

Pant, RK and Roul, B and Kumar Singh, D and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface. In: Semiconductor Science and Technology, 36 (1).

Mondal, S (2020) Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification. In: Semiconductor Science and Technology, 35 (10).

Deva Arun Kumar, Devak@iisc.ac.i and Mele, P and Ponraj, JS and Haunsbhavi, K and Varadharajaperumal, S and Alagarasan, D and Algarni, H and Angadi, B and Murahari, P and Ramesh, K (2020) Methanol solvent effect on photosensing performance of AZO thin films grown by nebulizer spray pyrolysis. In: Semiconductor Science and Technology, 35 (8).

Kalra, A and Rathkanthiwar, S and Muralidharan, R and Raghavan, S and Nath, DN (2020) Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes. In: Semiconductor Science and Technology, 35 (3).

Ganesan, K and Pendyala, NB and Rao, Koteswara KSR and Venkataraman, V and Bhat, HL (2010) Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals. In: Semiconductor Science and Technology, 25 (10).

Kalasad, MN and Rabinal, MK and Mulimani, BG and Avadhani, GS (2008) Temporal evolution of capped cadmium sulfide nanoparticles. In: Semiconductor Science and Technology, 23 . 045009: 1-5.

Devika, M and Reddy, Koteeswara N and Ramesh, K and Sumana, HR and Gunasekhar, KR and Gopal, ESR and Reddy, Ramakrishna KT (2006) The effect of substrate surface on the physical properties of SnS films. In: Semiconductor Science and Technology, 21 . pp. 1495-1501.

Joshua, Arjun and Venkataraman, V (2005) Effect of well width on the electro-optical properties of a quantum well. In: Semiconductor Science and Technology, 20 (6). pp. 490-495.

Victor, P and Krupanidhi, SB (2005) Deep level transient spectroscopy studies on $BaTiO_{3}$ and $Ba_{1-x}Ca_{x}TiO_{3}$ thin films deposited on Si substrates. In: Semiconductor Science and Technology, 20 (2). pp. 250-255.

Victor, P and Nagaraju, J and Krupanidhi, SB (2003) Growth and electrical characterization of laser ablated highly oriented zirconium titanate thin films in a metal–oxide semiconductor configuration. In: Semiconductor Science and Technology, 18 (2). pp. 183-189.

Vijayaraghavan, MN and Venkataraman, V and Xie, YH (2000) Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures. In: Semiconductor Science and Technology, 15 (10). pp. 957-960.

Thangaraju, B and Kaliannan, P (2000) Spray pyrolytically deposited PbS thin films. In: Semiconductor Science and Technology, 15 (08). pp. 849-853.

Gurumurthy, Suma and Bhat, HL and Kumar, Vikram (1999) Excellent rectifying characteristics in Au/n-CdTe diodes upon exposure to rf nitrogen plasma. In: Semiconductor Science and Technology, 14 (10). pp. 909-914.

Raghavan, MNV and Venkataraman, V (1998) Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures. In: Semiconductor Science and Technology, 13 (11). pp. 1317-1321.

Balasubramanian, Sathya and Gopinath, CS and Subramanian, S and Balasubramanian, N (1994) Exposure of InP to hydrogen plasma in the presence of -a 'sacrificial' InP-an x-ray photoelectron spectroscopic study. In: Semiconductor Science and Technology, 9 (9). pp. 1604-1607.

Prakash, S and Asokan, S and Ghare, DB (1994) Electrical switching behaviour of semiconducting aluminium telluride glasses. In: Semiconductor Science and Technology, 9 (8). pp. 1484-1488.

Balasubramanian, Sathya and Kumar, V (1992) Properties of GaAs:V grown by liquid phase epitaxy. In: Semiconductor Science and Technology, 74 (8). pp. 1117-1118.