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Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate

Ravindra, P and Chaudhary, R and Athresh, E and Vura, S and Raghavan, S and Ranjan, R and Majumdar, K and Avasthi, S (2021) Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate. In: Semiconductor Science and Technology, 36 (5).

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Official URL: https://doi.org/10.1088/1361-6641/abf0e5


Semiconducting oxides are often stable, non-toxic, and can potentially be deposited at a low cost. The existence of oxides with appropriate bandgap (<1.8 eV) and reasonable mobility points towards the alluring possibility of employing oxides as absorbers in 'all-oxide' solar cells. However, oxide absorbers have remained elusive due to the debilitating effects of low mobility, deep-defects, and inefficient doping, which degrade their optoelectronic performance. In this work, we report the effects of annealing on the optoelectronic properties of an emerging oxide solar absorber, manganese vanadate (Mn2V2O7, MVO). Films deposited using pulsed laser deposition show no photoluminescence (PL). After annealing in a nitrogen ambience, sharp PL (FWHM � 100 μeV) peaks are observed at low temperatures, which indicates improved optoelectronic quality. Our analysis suggests these emissions are from carriers trapped in very shallow native acceptor and donor type defects. This improvement is correlated with the reduction in Urbach energy, which also suggests reduced electronic disorder. Coupled with low bandgap and easy processing, MVO seems to be an exciting material for optoelectronics and photovoltaics. © 2021 IOP Publishing Ltd.

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: IOP Publishing Ltd
Additional Information: The copyright for this article belongs to IOP Publishing Ltd
Keywords: Annealing; Defects; Energy gap; Manganese; Nitrogen; Pulsed laser deposition; Semiconductor doping; Solar cells, Debilitating effects; Electronic disorder; Low temperatures; Nitrogen annealing; Optoelectronic properties; Photovoltaics; Semiconducting oxide; Urbach energy, Solar absorbers
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Jul 2021 09:11
Last Modified: 23 Jul 2021 09:11
URI: http://eprints.iisc.ac.in/id/eprint/68867

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