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Deep level transient spectroscopy studies on $BaTiO_{3}$ and $Ba_{1-x}Ca_{x}TiO_{3}$ thin films deposited on Si substrates

Victor, P and Krupanidhi, SB (2005) Deep level transient spectroscopy studies on $BaTiO_{3}$ and $Ba_{1-x}Ca_{x}TiO_{3}$ thin films deposited on Si substrates. In: Semiconductor Science and Technology, 20 (2). pp. 250-255.

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Laser ablation grown BaTiO3 and Ba1-xCaxTiO3 thin films were studied in the metal-ferroelectric-semiconductor configuration by the deep level transient spectroscopy (DLTS) technique. The capture cross section, bulk and interface traps were determined from the DLTS technique. The distributions of calculated interface states were mapped with the silicon energy band gap for both the thin films. The interface states of the Ba1-xCaxTiO3 thin films were found to be higher than the BaTiO3 thin films. The substitution of Ca2+ into the Ba2+ sites of BaTiO3 results in a decreased lattice constant, thereby leading to shrinkage in the unit cell. This might be one of the reasons for the higher density of interface states present in Ba1-xCaxTiO3, as it leads to a large number of unsaturated bonds at the interface of Si substrate-thin films. The calculated capture cross section of the interface traps in both the BaTiO3 and Ba1-xCaxTiO3 thin films was very low in the range of 10(-21) cm(2).

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: IOP Publishing
Additional Information: Copyright of this article belongs to IOP Publishing Ltd.
Keywords: Interface-State Parameters;Capacitance Measurements; Electronic Defect;Mos Structures; Dlts;Temperature; Transistors;Insulator;Emission;Titanate.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 06 Mar 2009 06:50
Last Modified: 19 Sep 2010 04:54
URI: http://eprints.iisc.ac.in/id/eprint/16922

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