Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification

Mondal, S (2020) Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification. In: Semiconductor Science and Technology, 35 (10).

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Abstract

The solution-processed thin-film transistors (TFTs) have become the core requirement for the flexible and transparent electronics industry since they are fabricated using cost-effective techniques. However, the fabrication of low-dimensional TFTs by the solution-processing technique is still a challenge due to the surface contact resistance (ρ c). The current study introduces a controllable ρ c involving the effect of dimensions (channel width/length = W/L) on TFTs. The ρ c was measured to be 2.04 × 109 m VA-1 when the channel length (L) of the TFT was 40 m. A substantial drop in the surface contact resistance to 1.8 × 108 m VA-1 was found with L = 5 m. Thus, a 91% control on ρ c was obtained when L reduced to 40 m from 5 m. Such a controllable ρ c was observed with respect to different dimensions of the TFTs. Indeed, an extreme control was obtained in the drain saturation current from 8 A to 0.8 A with respect to variation in dimension (W/L) from 15 to 2.5.

Item Type:	Journal Article
Publication:	Semiconductor Science and Technology
Publisher:	IOP Publishing Ltd
Additional Information:	The copyright for this article belongs to IOP Publishing Ltd.
Keywords:	Contact resistance; Cost effectiveness; Drain current; Electronics industry; Entertainment industry; Flexible electronics; Surface resistance; Thin film circuits; Thin films, Cost effective; Drain saturation current; Flexible and transparent electronics; Low dimensional; Solution-processed; Solution-processing; Surface contact resistance; Thin-film transistor (TFTs), Thin film transistors
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 Feb 2023 10:15
Last Modified:	13 Feb 2023 10:15
URI:	https://eprints.iisc.ac.in/id/eprint/80209

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