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Study of optical float-zone grown gallium oxide Schottky barrier diode

Sahoo, J and Vijayakumar, P and Saquib, T and Suganya, M and Ganesamoorthy, S and Muralidharan, R and Nath, DN (2024) Study of optical float-zone grown gallium oxide Schottky barrier diode. In: Semiconductor Science and Technology, 39 (5).

Sem_sci__tec_39_2024.pdf - Published Version

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Official URL: https://doi.org/10.1088/1361-6641/ad3d03


β � Ga 2 O 3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β � Ga 2 O 3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission model, Poole-Frenkel emission model, and Fowler-Nordheim tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV cm�1 is achieved. © 2024 IOP Publishing Ltd.

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: Institute of Physics
Additional Information: The copyright for this article belongs to authors.
Keywords: Diodes; Electric fields; Ohmic contacts; Schottky barrier diodes; Thermionic emission, Emission model; Float zones; Lateral schottky barrier diode; Leakage current modeling; Optical float-zone grown β-ga2O3; Optical-; Reverse leakage current; Reverse leakage current modeling; Schottky contacts; Trench isolation, Gallium compounds
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 09 Jul 2024 12:18
Last Modified: 09 Jul 2024 12:18
URI: http://eprints.iisc.ac.in/id/eprint/84764

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