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Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

Khan, MA and Muralidharan, R and Chandrasekar, H (2023) Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs. In: Semiconductor Science and Technology, 38 (3).

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Official URL: https://10.1088/1361-6641/acb8d5


In this article, we report on the development of an analytical model to estimate area-specific ON-state resistance (R ds,on) of GaN-based power high electron mobility transistor (HEMT) using rated device specifications—ON-state drain current (I ON) and maximum operating drain-to-source voltage (V DSO)—as input parameters. The rated I ON and V DSO are considered as fractions k and S, of the maximum possible drain current (I DS,max) and breakdown voltage (V BR), respectively, deliverable by the power device. The developed model is utilized to obtain the optimal physical design space parameters for a comb-like power HEMT design. Due consideration has been given to the trade-off between R ds,on and area-specific R ds,on of the transistor, device processing limitations for all the physical device parameters. The developed model has been validated with experimental results of prior literature. Our calculations impose a lower-bound for the best possible R ds,on as well as the area-specific on-resistance product (R ds,on × AA) that can be obtained for a given starting channel sheet resistance in the comb architecture for a desired I ON − V DSO rating. © 2023 IOP Publishing Ltd.

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: Institute of Physics
Additional Information: The copyright of this article belongs to Institute of Physics.
Keywords: Economic and social effects; Electric breakdown; Gallium nitride; High electron mobility transistors; III-V semiconductors; 'current; Area-specific ON-state resistance; Developed model; High electron-mobility transistors; On state; On-state drain current; Physical design; Power; Power high electron mobility transistor; State resistance; Drain current
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 10 Mar 2023 10:26
Last Modified: 10 Mar 2023 10:26
URI: https://eprints.iisc.ac.in/id/eprint/80914

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