ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface

Pant, RK and Roul, B and Kumar Singh, D and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface. In: Semiconductor Science and Technology, 36 (1).

[img] PDF
sem_sci_tec_36-1_2020.pdf - Published Version
Restricted to Registered users only

Download (2MB) | Request a copy
Official URL: https://doi.org/10.1088/1361-6641/abc51a


Self-aligned GaN nanorods of various densities are grown on an r-plane Al2O3 substrate with Stranski-Krastanov or layer-plus-island growth conditions by using a plasma-assisted molecular beam epitaxy system. These conditions result in the formation of a GaN nanorod matrix on an epitaxial GaN thin film. The orientation of the nanorods was found to be at an inclination of ∼60 from the substrate. As expected, the GaN thin film grows along the [11-20] direction, but interestingly the nanorods have a preferential growth direction along the [0002] axis. The overall structure mimics the Gaussian distribution of Schottky barriers at the metal-semiconductor interface. The GaN nanorod/thin-film matrix systematically causes the well-known Au/GaN Schottky metal-semiconductor interface to display an Ohmic type of behavior. A systematic reduction of the Schottky barrier is observed with an increase in the GaN nanorod density (from 5 to 65 nanorods micron-2). The overall configuration provides a tunable Gaussian distribution of Schottky barriers with nanorod density, which could be extremely useful for replacing conventional multi-level electrode stacking techniques

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: IOP Publishing Ltd
Additional Information: The copyright for this article belongs to IOP Publishing Ltd.
Keywords: Alumina; Aluminum oxide; Gallium nitride; Gaussian distribution; Gold compounds; III-V semiconductors; Molecular beam epitaxy; Nanorods; Schottky barrier diodes; Substrates; Thin films; Wide band gap semiconductors, Inhomogeneities; Metal semiconductor interface; Nanorod density; Plasma assisted molecular beam epitaxy; Preferential growth; Schottky barriers; Schottky metals; Various densities, Semiconducting gallium compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 11 Feb 2023 03:04
Last Modified: 11 Feb 2023 03:04
URI: https://eprints.iisc.ac.in/id/eprint/80178

Actions (login required)

View Item View Item