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Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals

Ganesan, K and Pendyala, NB and Rao, Koteswara KSR and Venkataraman, V and Bhat, HL (2010) Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals. In: Semiconductor Science and Technology, 25 (10).

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Official URL: http://iopscience.iop.org/0268-1242/25/10/105003/


Ga1-xMnxSb crystals are grown with different Mn doping concentrations by the horizontal Bridgman method (x = 0 - 0.04). Optical absorption and photoluminescence studies are carried out in the temperature range 3-300 K. Optical absorption studies reveal that the inter-valence band transition from the spin-orbit split-off band to the light/heavy hole bands is dominant over the fundamental valence band to conduction band absorption. In higher doped crystals, the fundamental absorption peak is merged with the inter-valence band transition and could not be resolved. Photoluminescence measurements in heavily doped crystals reveal the band gap narrowing and band filling effects due to the Fermi level shifting into the valence band.

Item Type: Journal Article
Publication: Semiconductor Science and Technology
Publisher: Institute of Physics
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 18 Oct 2010 07:38
Last Modified: 18 Oct 2010 07:38
URI: http://eprints.iisc.ac.in/id/eprint/33119

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