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Wang, D and Gao, C and Wang, Y and Chang, X and Hu, Y and Li, J and Feng, T and Dey, JK and Roul, B and Lu, X and Du, L and Zhai, Z and Zhu, H and Huang, W and Das, S and Su, F and Zhu, L-G and Shi, Q (2024) VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation. In: ACS Applied Materials and Interfaces, 16 (8). pp. 10886-10896.

Roul, B and Chowdhury, AM and Kumari, M and Kumawat, KL and Das, S and Nanda, KK and Krupanidhi, SB (2022) Reduced-graphene oxide decorated γ-In2Se3/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit. In: Materials Advances .

Roul, B and Singh, DK and Chowdhury, AM and Kumari, M and Kumawat, KL and Nanda, KK and Krupanidhi, SB (2022) Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4355-4361.

Guo, X and Zhou, L and Roul, B and Wu, Y and Huang, Y and Das, S and Hong, Z (2022) Theoretical Understanding of Polar Topological Phase Transitions in Functional Oxide Heterostructures: A Review. In: Small Methods .

Chowdhury, AM and Singh, DK and Roul, B and Nanda, KK and Krupanidhi, SB (2022) Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate. In: Materials Advances, 3 (15). pp. 6237-6245.

Feng, T and Hu, Y and Chang, X and Huang, W and Wang, D and Zhu, H and An, T and Li, W and Meng, K and Lu, X and Roul, B and Das, S and Deng, H and Zaytsev, KI and Zhu, L-G and Shi, Q (2022) Highly Flexible Ti3C2TxMXene/Waterborne Polyurethane Membranes for High-Efficiency Terahertz Modulation with Low Insertion Loss. In: ACS Applied Materials and Interfaces, 15 (5). 7592- 7601.

Roul, B and Singh, DK and Pant, R and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2021) Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height. In: Journal of Applied Physics, 129 (24).

Pant, RK and Roul, B and Kumar Singh, D and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface. In: Semiconductor Science and Technology, 36 (1).

Chowdhury, AM and Roul, B and Singh, DK and Pant, R and Nanda, KK and Krupanidhi, SB (2020) Temperature Dependent "s-Shaped" Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment. In: ACS Applied Nano Materials, 3 (8). pp. 8453-8460.

Singh, DK and Pant, R and Roul, B and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction. In: ACS Applied Electronic Materials, 2 (7). pp. 2155-2163.

Singh, DK and Roul, B and Pant, R and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces. In: Applied Physics Letters, 116 (25).

Singh, DK and Pant, R and Chowdhury, AM and Roul, B and Nanda, KK and Krupanidhi, SB (2020) Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector. In: ACS Applied Electronic Materials, 2 (4). pp. 944-953.

Pant, R and Singh, DK and Chowdhury, AM and Roul, B and Nanda, KK and Krupanidhi, SB (2020) Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures. In: APL Materials, 8 (2).

Pant, R and Singh, DK and Chowdhury, AM and Roul, B and Nanda, KK and Krupanidhi, SB (2020) Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes. In: ACS Applied Electronic Materials, 2 (3). pp. 769-779.

Chowdhury, AM and Chandan, G and Pant, R and Roul, B and Singh, DK and Nanda, KK and Krupanidhi, SB (2019) Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector. In: ACS Applied Materials and Interfaces, 11 (10). pp. 10418-10425.

Roul, B and Pant, R and Chowdhury, AM and Chandan, G and Singh, DK and Chirakkara, S and Nanda, KK and Krupanidhi, SB (2019) Highly responsive ZnO/AlN/Si heterostructure-based infrared- and visible-blind ultraviolet photodetectors with high rejection ratio. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1345-1352.

Pandey, BK and Bhat, TN and Roul, B and Nanda, KK and Krupanidhi, SB (2018) BTO/GaN heterostructure based on Schottky junction for high-temperature selective ultra-violet photo detection. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (4).

Kumar, Mahesh and Bhat, TN and Rajpalke, MK and Roul, B and Misra, P and Kukreja, LM and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2010) Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy. In: Bulletin of Materials Science, 33 (3). pp. 221-226.