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Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures

Pant, R and Singh, DK and Chowdhury, AM and Roul, B and Nanda, KK and Krupanidhi, SB (2020) Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures. In: APL Materials, 8 (2).

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Official URL: https://dx.doi.org/10.1063/1.5140689


Energy consumption is one of the most important aspects of any electronic device which needs further improvements in order to achieve a better sustainable future. This is equally true for commercially available photodetectors, which consume a lot of energy by using huge external bias voltage. So far, thin films have been widely used for photodetection of various bands of electromagnetic radiation. The only property which holds them back is the slower performance and lower responsivity compared to nanostructure-based devices. However, the disadvantage associated with nanostructure-based photodetectors is that they lack scalability for mass production or commercialization, due to the complex and expensive device fabrication steps. One of the plausible solutions for this limitation could be the use of hybrid structures, which are the combination of high-quality crystal materials such as ZnO, (Al, Ga, In)N, and GaAs with 2D materials consisting of MoS2, graphene, WSe2, and SnS2. This would provide extensive control over bandgap engineering, which could be used for scalable modular device fabrication. These approaches promise the development of photodetectors with relatively higher responsivities as well as self-powered photodetection. The current perspective focuses on the advancements in III-nitride-based photodetectors and their promising potentials for self-powered, broadband, and ultrafast photodetectors using hybrid III-nitride/2D interfaces.

Item Type: Journal Article
Publication: APL Materials
Publisher: American Institute of Physics Inc.
Additional Information: The copyright of this article belongs to American Institute of Physics Inc.
Keywords: Aluminum compounds; Electromagnetic waves; Electron devices; Energy utilization; Gallium arsenide; Hybrid materials; II-VI semiconductors; III-V semiconductors; Indium compounds; IV-VI semiconductors; Layered semiconductors; Molybdenum compounds; Nanostructures; Nitrides; Photodetectors; Photons; Semiconducting tin compounds; Tin compounds; Zinc oxide, Band gap engineering; Device fabrications; Electronic device; High quality crystals; Hybrid structure; Mass production; Modular device; Photo detection, Sulfur compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 17 Jun 2020 07:22
Last Modified: 17 Jun 2020 07:22
URI: http://eprints.iisc.ac.in/id/eprint/64822

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