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BTO/GaN heterostructure based on Schottky junction for high-temperature selective ultra-violet photo detection

Pandey, BK and Bhat, TN and Roul, B and Nanda, KK and Krupanidhi, SB (2018) BTO/GaN heterostructure based on Schottky junction for high-temperature selective ultra-violet photo detection. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (4).

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Official URL: http://dx.doi.org/10.1088/1361-6463/aa9f6b


Ferroelectric/semiconductor heterostructures have attracted great interest for future optoelectronic and electronic devices due to ferroelectric polarization induced interfacial charge coupling at the junction. Here, we report on the fabrication of GaN/BaTiO3 (GaN/BTO) heterostructure based Schottky junction on c-sapphire using pulsed laser deposition and its performance in UV detection. The Schottky-type BTO/GaN heterqjunction for high temperature selective ultraviolet photo detection is demonstrated ranging from 313 to 423 K. The temperature-dependent parameters such as responsivity (R-lambda), sensitivity (S), specific detectivity (D*), and barrier height (phi(b)) and ideality factor (eta) of the device have been quantified. Calculated parameters are systematically compared with the effect of dark and UV light. The responsivity increases with respect to temperature up to 413 K and then decrease. The highest UV (lambda = 360nm) responsivity is found to be 45.54 and 45.21 A W-1, at temperature 393 and 413 K respectively under +5 V bias. The Schottky barrier height of BTO/GaN heterojunction increased with increasing temperature in presence of dark as well as UV light while ideality factor decrease in both the cases. Overall, the efficiency of BTO/GaN device is optimized at 413 K. We have observed high sensitivity of BTO/GaN device as compared to GaN device with respect to applied bias.

Item Type: Journal Article
Publisher: 10.1088/1361-6463/aa9f6b
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 25 Jan 2018 09:34
Last Modified: 25 Jan 2018 09:34
URI: http://eprints.iisc.ac.in/id/eprint/58852

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