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Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector

Singh, DK and Pant, R and Chowdhury, AM and Roul, B and Nanda, KK and Krupanidhi, SB (2020) Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector. In: ACS Applied Electronic Materials, 2 (4). pp. 944-953.

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Official URL: https://doi.org/10.1021/acsaelm.0c00007


By combining unique properties of ultrathin 2D materials with conventional 3D semiconductors, devices with enhanced functionalities can be realized. Here, we report a self-powered and ultrafast photodetector based on a hybrid MoS2/AlN/Si heterostructure. The heterojunction is formed by depositing a MoS2 thin film by pulsed laser deposition on an AlN/Si(111) template. The vertical transport properties of the device under dark and light illumination conditions exhibit an excellent photoresponse in a broad range of wavelengths (300-1100 nm) at 0 V. The maximum responsivity of this photodetector is found to be 9.93 A/W at a wavelength of 900 nm. The device shows an ultrafast temporal response with response/recovery times of 12.5/14.9 μs. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy reveal the presence of native oxygen impurities in AlN throughout the bulk of the film. These oxygen defects form a deep donor level in AlN and play a crucial role in the transport of the photogenerated carriers, resulting in enhanced device performance. Copyright © 2020 American Chemical Society.

Item Type: Journal Article
Publication: ACS Applied Electronic Materials
Publisher: American Chemical Society
Additional Information: The copyright for this article belongs to American Chemical Society.
Keywords: Aluminum nitride; Defects; Heterojunctions; High resolution transmission electron microscopy; III-V semiconductors; Layered semiconductors; Molybdenum compounds; Oxygen; Photodetectors; Photons; Pulsed laser deposition; Silicon; Sulfur compounds; Wide band gap semiconductors; X ray photoelectron spectroscopy, Cross sectional transmission electron microscopy; Device performance; Light illumination; Oxygen impurity; Photogenerated carriers; Photoresponses; Temporal response; Ultrafast photoresponse, Nitrogen compounds
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 06 Feb 2023 09:34
Last Modified: 06 Feb 2023 09:34
URI: https://eprints.iisc.ac.in/id/eprint/79921

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