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Reduced-graphene oxide decorated γ-In2Se3/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit

Roul, B and Chowdhury, AM and Kumari, M and Kumawat, KL and Das, S and Nanda, KK and Krupanidhi, SB (2022) Reduced-graphene oxide decorated γ-In2Se3/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit. In: Materials Advances .

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Official URL: https://doi.org/10.1039/D2MA00918H


Recently, two-dimensional (2D) semiconductor-based broadband photodetectors have gained tremendous attention due to their immense potential applications in high-performance optoelectronic devices. In this report, we demonstrate a high-performance photodetector based on reduced-graphene oxide (rGO) decorated p-γ-In2Se3/n-Si heterostructures. The integration of rGO with a p-In2Se3/n-Si heterostructure results in an enhanced responsivity of ∼9.5 A W−1 with detectivity of ∼2.39 × 1012 cm Hz1/2 W−1 at −3 V under the illumination of 685 nm light with an intensity of 0.1 mW cm−2. In addition, the rGO/In2Se3/Si heterostructure shows high sensitivity and fast response/recovery times (40/90 μs) with a broadband response ranging from visible to infra-red wavelengths, which makes it a suitable candidate for an efficient broadband photodetector. The enhanced figures-of-merit of the rGO/γ-In2Se3/Si heterostructure could be due to the increased optical absorption of incident light and effective separation of the photogenerated charge carriers because of the top rGO layer. Here, the rGO layer acts as an efficient hole transporting layer due to its high hole mobility, which effectively reduces the recombination of the photogenerated charge carriers. © 2023 RSC.

Item Type: Journal Article
Publication: Materials Advances
Publisher: Royal Society of Chemistry
Additional Information: The copyright for this article belongs to the Authors.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 25 Jan 2023 09:06
Last Modified: 25 Jan 2023 09:06
URI: https://eprints.iisc.ac.in/id/eprint/79503

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