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Number of items: 11.

Conference Proceedings

Kranthi, NK and Mishra, Abhishek and Meersha, Adil and Shrivastava, Mayank (2017) ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.

Conference Paper

Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2023) Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Monishmurali, M and Kranthi, NK and Boselli, G and Shrivastava, M (2022) Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. In: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 27 March 2022 through 31 March 2022, Dallas, 6C11-6C16.

Kranthi, NK and Di Sarro, J and Sankaralingam, R and Boselli, G and Shrivastava, M (2020) Insights into the system-level IEC ESD failure in high voltage DeNMOS-SCR for automotive applications. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.

Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

Kranthi, NK and Sampath Kumar, B and Salman, A and Boselli, G and Shrivastava, M (2020) Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. In: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, 28 April-30 May 2020, Virtual, Online; United States.

Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2019) Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip. In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.

Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.

Journal Article

Kranthi, NK and Sarro, JD and Rajagopal, K and Kunz, H and Sankaralingam, R and Boselli, G and Shrivastava, M (2022) Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs. In: IEEE Transactions on Electron Devices, 69 (5). pp. 2552-2559.

Kranthi, NK and Boselli, G and Shrivastava, M (2022) HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1242-1250.

Kranthi, NK and Sarro, JD and Sankaralingam, R and Boselli, G and Shrivastava, M (2021) System-Level IEC ESD Failures in High-Voltage DeNMOS-SCR: Physical Insights and Design Guidelines. In: IEEE Transactions on Electron Devices, 68 (9). pp. 4242-4250.

This list was generated on Sat Jun 15 10:43:56 2024 IST.