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Conference Proceedings

Paul, Milova and Kumar, BSampath and Gossner, Harald and Shrivastava, Mayank (2018) Contact and Junction Engineering in Bulk FinFET Technology for Improved ESD/Latch-up Performance with Design Trade-offs and its Implications on Hot Carrier Reliability. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2017) FinFET SCR: Design Challenges and Novel Fin SCR Approaches for On-Chip ESD Protection. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2017) Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 391-394.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) Comparison of Breakdown Characteristics of DeNMOS Devices with Various Drain Structures. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 736-739.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) On the Breakdown Physics of Trench-Gate Drain Extended NMOS. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 804-807.

Shrivastava, Mayank and Gossner, Harald (2014) ESD Behavior of Metallic Carbon Nanotubes. In: 36th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 07-12, 2014, Tucson, AZ.

Conference Paper

Kumar, B Sampath and Paul, Milova and Shrivastava, Mayank and Gossner, Harald (2018) Performance and Reliability Insights of Drain Extended FinFET Devices for High Voltage SoC Applications. In: 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), MAY 13-17, 2018, Chicago, IL, pp. 72-75.

Journal Article

Paul, Milova and Kumar, B Sampath and Nagothu, Kranthi Karmel and Singhal, Pulkit and Gossner, Harald and Shrivastava, Mayank (2019) Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (12). pp. 5072-5079.

Paul, Milova and Kumar, B Sampath and Russ, Christian and Gossner, Harald and Shrivastava, Mayank (2018) Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (11). pp. 4755-4763.

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2018) Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (7). pp. 2981-2989.

Mishra, Abhishek and Gossner, Harald and Shrivastava, Mayank (2017) ESD Behavior of MWCNT Interconnects-Part I: Observations and Insights. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17 (4). pp. 600-607.

Swain, Peeyusha Saurabha and Shrivastava, Mayank and Baghini, Maryam Shojaei and Gossner, Harald and Rao, Valipe Ramgopal (2016) On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (4). pp. 1621-1629.

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2016) On the Improved High-Frequency Linearity of Drain Extended MOS Devices. In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 26 (12). pp. 999-1001.

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Sharma, Dinesh Kumar and Gossner, Harald and Rao, Ramgopal V (2015) Part I: High-Voltage MOS Device Design for Improved Static and RF Performance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3168-3175.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part I: Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4097-4104.

Gupta, Ankur and Shrivastava, Mayank and Baghini, Maryam Shojaei and Chandorkar, AN and Gossner, Harald and Rao, Ramgopal V (2015) Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (10). pp. 3176-3183.

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Valipe Ramgopal (2015) Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 62 (12). pp. 4105-4113.

Shrivastava, Mayank and Kulshrestha, Neha and Gossner, Harald (2014) ESD Investigations of Multiwalled Carbon Nanotubes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 14 (1). pp. 555-563.