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Mandal, M and Roy, SK and Kumar, B and Malingu, G and Srivastava, M and Basu, K (2024) Comparison of Single-Phase GaN HEMT-based PFC Topologies for Onboard EV Chargers. In: 2024 IEEE International Communications Energy Conference, INTELEC 2024, 4 August 2024through 7 August 2024, Bengaluru.
Mandal, M and Kumar, MB and Malingu, G and Roy, SK and Basu, K (2024) A Detailed Experimental Switching Transient Performance Comparison of Normally-off GaN HEMTs. In: 2024 IEEE International Communications Energy Conference, INTELEC 2024, 4 August 2024through 7 August 2024, Bengaluru.
Mandal, M and Bharath Kumar, M and Malingu, G and Roy, SK and Basu, K (2024) Energy-based Method to Estimate the Partial Hard Turn-on Loss of Complementary SiC MOSFET from Experiment. In: UNSPECIFIED, pp. 1114-1119.
Mandal, M and Roy, SK and Basu, K (2024) An Experimental Technique for Detecting False Turn-on of SiC MOSFETs. In: UNSPECIFIED, pp. 2456-2460.
Mazumder, S and Mandal, M and Bharath Kumar, M and Malingu, G and Roy, SK and Basu, K (2024) Measurement of Circuit Parasitics of a 200kW SiC based Stack. In: UNSPECIFIED, pp. 1120-1124.
Keesara, S and Mazumder, S and Roy, SK and Kundu, SK and Peter, PK and Prasad, E and Basu, K (2023) Design and Development of Three-Phase High-Frequency AC Power Distribution Architecture for Space Application. In: UNSPECIFIED, pp. 6074-6079.
Isame, M and Roy, SK and Prasad, E and Basu, K (2023) A Series Resonant Converter based Experimental Measurement of B-H Curve for Core Loss Estimation of a High Frequency Inductor. In: UNSPECIFIED, pp. 5658-5663.
Mandal, M and Roy, SK and Basu, K (2022) Analytical Switching Transient Model of TO-247-4 Packaged SiC MOSFETs and Comparison with TO-247-3 Devices. In: IEEE Energy Conversion Congress and Exposition (ECCE), 09 - 13 October 2022, Detroit.
Bansal, I and Roy, SK and Basu, K and Sen, P (2022) Flash imaging for microfluidics. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore, India.
Mandal, M and Roy, SK and Basu, K (2022) Investigation on the impact of External Layout-dependent Gate-Drain Capacitance on the Switching Dynamics of Si SJMOS. In: 10th IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2022, 14 - 17 December 2022, Jaipur.
Dhole, A and Roy, SK and Basu, K (2021) Estimation and Measurement of Power Loss in a High Frequency Inductor for a DAB based DC-DC Converter. In: 2021 National Power Electronics Conference, 15-17 Dec 2021, Bhubaneswar.
Gurudiwan, S and Roy, SK and Basu, K (2019) Design and Implementation of 1.5 kW Half Bridge Bidirectional DC-DC Converter based on Gallium Nitride devices. In: 2019 National Power Electronics Conference (NPEC), 13-15 Dec. 2019, Tiruchirappalli, India.
Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .
Roy, SK and Basu, K (2022) Measurement of Circuit Parasitics of SiC MOSFET in a Half-Bridge Configuration. In: IEEE Transactions on Power Electronics, 37 (10). pp. 11911-11926.
Roy, SK and Basu, K (2021) Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair. In: IEEE Transactions on Power Electronics, 36 (1). pp. 861-875.
Roy, SK and Basu, K (2021) Analytical Model to Study Turn-OFF Soft Switching Dynamics of SiC MOSFET in a Half-Bridge Configuration. In: IEEE Transactions on Power Electronics, 36 (11). pp. 13039-13056.
