Analytical Model to Study Turn-OFF Soft Switching Dynamics of SiC MOSFET in a Half-Bridge Configuration

Roy, SK and Basu, K (2021) Analytical Model to Study Turn-OFF Soft Switching Dynamics of SiC MOSFET in a Half-Bridge Configuration. In: IEEE Transactions on Power Electronics, 36 (11). pp. 13039-13056.

PDF IEEE_tra_pow_36-11_13039-13039_2021.pdf - Published Version Restricted to Registered users only Download (6MB) | Request a copy

Abstract

Switching transients of SiC MOSFET are fast compared to its Si counterpart. Fast switching transient reduces switching loss but may induce prolonged oscillations, spurious turn-on, high device stress, and electromagnetic interference (EMI)-related issues, etc. In soft switched converters, use of external drain source capacitance can reduce these adverse effects along with the reduction in switching loss. However, the selection of external drain source capacitance is not straightforward. A large external capacitance reduces switching loss, (dv/dt), (di/dt), and transient over-voltage but may also result in higher dead-time loss and reduced switching frequency. This article presents an analytical model that captures the soft turn-off switching dynamics of SiC MOSFET using parameters obtained from device datasheet along with the values of external circuit parasitics. Unlike linear approximation, a nonlinear channel current model is used along with a comprehensive model of transfer capacitance. The effect of external gate drain capacitance is also considered. This leads to a better estimation of switching transition time, actual loss, (dv/dt), (di/dt), and transient over voltage. Also, a method to select an optimal value of external drain source capacitance is presented. The proposed model is validated through behavioral simulation and experiment for two 1.2-kV discrete SiC MOSFETs. © 1986-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Power Electronics
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Analytical models; Capacitance; MOSFET devices; Silicon; Silicon carbide, Behavioural simulations; Comprehensive model; Gate-drain capacitance; Linear approximations; Soft-switched converters; Switching transient; Switching transitions; Transient over-voltage, Switching frequency
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	21 Feb 2023 05:16
Last Modified:	21 Feb 2023 05:16
URI:	https://eprints.iisc.ac.in/id/eprint/80501

Actions (login required)

View Item