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An Experimental Technique for Detecting False Turn-on of SiC MOSFETs

Mandal, M and Roy, SK and Basu, K (2024) An Experimental Technique for Detecting False Turn-on of SiC MOSFETs. In: UNSPECIFIED, pp. 2456-2460.

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Official URL: https://doi.org/10.1109/APEC48139.2024.10509367

Abstract

Due to the increased likelihood of a potential dc bus shoot-through and eventual device failure, detection of false turn-on of SiC MOSFET is essential. However, detecting false turn-on through experiments is challenging due to the difficulty in measuring the actual gate-source voltage and channel current of the device. This paper presents an experimental method to detect the occurrence of false turn-on of SiC MOSFETs when used in a half-bridge configuration. The false turn-on event causes a device overcurrent and slower drain-source voltage transitions, which are used as indicators for the experimental method. The method is verified through DPT experiments and SPICE simulation for a 1.2kV SiC MOSFET for a range of operating conditions. © 2024 IEEE.

Item Type: Conference Paper
Publication: Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Crosstalk; MOSFET devices; Silicon; SPICE, Detection; Device failures; DPT; Experimental methods; Experimental techniques; False turn-on; MOS-FET; Shoot-through; SiC MOS-FET; SiC MOSFETs, Silicon carbide
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 01 Jun 2024 10:37
Last Modified: 01 Jun 2024 10:37
URI: https://eprints.iisc.ac.in/id/eprint/85144

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