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Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair

Roy, SK and Basu, K (2021) Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair. In: IEEE Transactions on Power Electronics, 36 (1). pp. 861-875.

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Official URL: https://dx.doi.org/10.1109/TPEL.2020.2998873


Fast switching transient of SiC mosfet may lead to prolonged oscillations, spurious turn on, large device stress, and high amount of electromagnetic interference generation. For an optimal layout and gate driver design, study of switching dynamics is important. This article presents an analytical model that captures the turn-off switching dynamics of SiC mosfet and SiC Schottky barrier diode (SBD) pair using parameters obtained from device and gate driver datasheets and the values of external circuit parasitics. Unlike linear approximation, a detailed model of channel current is considered that captures the gradual transition from ohmic to saturation region and the transverse electric field effect. A comprehensive model of the transfer capacitance is used and the effect of external gate-drain capacitance is considered. This results in a better estimation of switching transition time, actual loss incurred, (dv/dt), (di/dt), and transient overvoltage. The behavioral simulation and experimental results confirm the accuracy of the presented analytical model over a range of operating conditions for two 1.2-kV discrete SiC mosfet and SBD pairs of different current ratings. © 1986-2012 IEEE.

Item Type: Journal Article
Publication: IEEE Transactions on Power Electronics
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: Copyright to this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Analytical models; Capacitance; Dynamics; Electric field effects; Electromagnetic pulse; MOSFET devices; Schottky barrier diodes; Silicon; Silicon carbide; Silicon compounds; Switching, Behavioral simulation; Gate-drain capacitance; Linear approximations; Operating condition; Schottky Barrier Diode(SBD); Switching transitions; Transient over-voltage; Transverse electric field, Power semiconductor diodes
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 06 Jan 2021 11:37
Last Modified: 06 Jan 2021 11:37
URI: http://eprints.iisc.ac.in/id/eprint/66737

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