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V, RSS and Singh, AR and Vura, S and Parate, SK and Venugopalarao, A and Raghavan, S and Nukala, P and Avasthi, S (2024) Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si(100). In: Materialia, 34 .
Parate, SK and Vura, S and Pal, S and Khandelwal, U and Sandilya Ventrapragada, RS and Rai, RK and Molleti, SH and Kumar, V and Patil, G and Jain, M and Mallya, A and Ahmadi, M and Kooi, B and Avasthi, S and Ranjan, R and Raghavan, S and Chandorkar, S and Nukala, P (2024) Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100). In: Nature Communications, 15 (1).
Vura, S and Rai, RK and Nukala, P and Raghavan, S (2022) Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration. In: Thin Solid Films, 758 .
Vura, S and Ul Muazzam, U and Kumar, V and Vanjari, SC and Muralidharan, R and Digbijoy, N and Nukala, P and Raghavan, S (2022) Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors. In: ACS Applied Electronic Materials, 4 (4). pp. 1619-1625.
Ravindra, P and Chaudhary, R and Athresh, E and Vura, S and Raghavan, S and Ranjan, R and Majumdar, K and Avasthi, S (2021) Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate. In: Semiconductor Science and Technology, 36 (5).
Vura, S and Jeyaselvan, V and Biswas, R and Raghunathan, V and Selvaraja, SK and Raghavan, S (2021) Epitaxial BaTiO3on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer. In: ACS Applied Electronic Materials, 3 (2). pp. 687-695.
Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.
Kumari, K and Vura, S and Raghavan, S and Avasthi, S (2021) Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing. In: Materials Letters, 285 .
Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.