ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors

Vura, S and Ul Muazzam, U and Kumar, V and Vanjari, SC and Muralidharan, R and Digbijoy, N and Nukala, P and Raghavan, S (2022) Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors. In: ACS Applied Electronic Materials, 4 (4). pp. 1619-1625.

[img] PDF
ACS_app_ele_mat_4-4_1619-1625_2022.pdf - Published Version
Restricted to Registered users only

Download (4MB) | Request a copy
Official URL: https://doi.org/10.1021/acsaelm.1c01296


In this report, we demonstrate direct epitaxial integration of β-Ga2O3on a (400) oriented silicon on insulator substrate toward deep-UV (DUV) optoelectronics. The 550 nm thick (400) epitaxial-β-Ga2O3films are deposited onto Si(100) using a two-step buffer and a two-step epilayer scheme. The epitaxial orientation relation between β-Ga2O3, MgO, and silicon(100) is given by (400)β-Ga||(100)MgO||(100)Siand «010»β-Ga||«011»MgO||«110»Si. The presence of rotational variants is confirmed by X-ray diffraction and transmission electron microscopy. Epitaxy was found to be mediated through a MgGa2O4layer formed at the β-Ga2O3/MgO interface under oxygen-deficient conditions during pulsed layer deposition. The ω-scan symmetric and asymmetric full width at half-maximum values of β-Ga2O3are 2.41 and 2.39°, respectively. Photodetectors realized in a conventional metal-semiconductor-metal geometry exhibit a maximum responsivity of 11.8 A/W at 246 nm at 40 V with a photo to dark current ratio of 2.5 × 102and a UV-to-visible rejection ratio > 103. The detectors do not exhibit any persistent photoconductivity as is evident from the rise and fall times of 0.54 and 0.32 s, respectively. Such a monolithic integration of β-Ga2O3on Si(100) opens up opportunities for the development of integrated DUV focal plane arrays on a SoC chip.

Item Type: Journal Article
Publication: ACS Applied Electronic Materials
Publisher: American Chemical Society
Additional Information: The copyright for this article belongs to the American Chemical Society.
Keywords: Epitaxial growth; Gallium compounds; Geometry; High resolution transmission electron microscopy; Integration; Magnesia; Photodetectors; Photons; Programmable logic controllers; Silicon on insulator technology; System-on-chip, Deep ultraviolet; Deep uv; Deep-UV photodetector; Gallium oxide on si(100); Monolithic integration; Monolithics; Spectral response; UV photodetectors; X- ray diffractions; β -Ga2O3, X ray diffraction
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 19 May 2022 09:24
Last Modified: 24 Jun 2022 05:26
URI: https://eprints.iisc.ac.in/id/eprint/71900

Actions (login required)

View Item View Item