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Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

Vura, S and Rai, RK and Nukala, P and Raghavan, S (2022) Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration. In: Thin Solid Films, 758 .

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Official URL: https://doi.org/10.1016/j.tsf.2022.139456


Epitaxial TiN films on (100) Si have been realized by reactive pulsed laser deposition (PLD). Their utility is demonstrated by subsequent growth of epitaxial BaTiO3. PLD geometry optimization has yielded TiN films with a low particulate density, ∼ 6 × 103 cm−2, but with a growth rate, ∼1 μm/hr, comparable to the standard On-axis geometry. The method of heat up to growth temperatures yields oxide free epitaxial interface, (001)TiN ||(001)Si and [removed] TiN ||[removed] Si and ω-scan full width at half maximum of 1.2° in symmetric and asymmetric geometries. Repetition rate and fluence effect studies have resulted in films with a surface roughness of < 5 nm as required for device fabrication. Parameters that increase surface roughness also raise oxygen incorporation. A BaTiO3-TiN-Si stack, (001)BaTiO3||(001)TiN||(001)Si and [removed]BaTiO3||[removed]TiN||[removed] Si, is demonstrated with switchable out of plane polarization.

Item Type: Journal Article
Publication: Thin Solid Films
Publisher: Elsevier B.V.
Additional Information: The copyright for this article belongs to Elsevier B.V.
Keywords: Barium titanate; Ferroelectric films; Ferroelectricity; Geometry; Metallic films; Morphology; Oxide films; Pulsed laser deposition; Pulsed lasers; Silicon; Surface roughness; Tin oxides; Titanium nitride; X ray diffraction, Deposition geometry; Functional oxides; Geometry optimization; Particulates; Pulsed-laser deposition; Reactive pulsed laser deposition; Si(1 0 0); Silicon substrates; TiN films; X- ray diffractions, Surface morphology
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 05 Oct 2022 05:06
Last Modified: 05 Oct 2022 05:06
URI: https://eprints.iisc.ac.in/id/eprint/77020

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