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Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1

Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .

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Official URL: http://dx.doi.org/10.1002/pssa.201900709


A submicron gate normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a high on-current and high threshold voltage (VTH) is demonstrated. The high-performance device is realized utilizing a gate recess with a length and depth of 200 and 124 nm, respectively. The recess-etched region has a roughness of 0.7 nm. Various recess-etch depths and dielectric annealing conditions are used to tune VTH. The optimized device exhibits an on-current and VTH of 500 mA mm�1 and 5 V, respectively. The measured breakdown characteristics of the devices and their limitations are investigated using 2D-technology computer-aided design (TCAD) device simulation. The penetration of the residual electric field in most of the recess region can be the reason for the premature breakdown of deeply scaled recess-gate e-mode HEMTs.

Item Type: Journal Article
Publication: Physica Status Solidi (A) Applications and Materials Science
Publisher: WILEY-VCH
Additional Information: Copyright of this article belongs to WILEY-VCH
Keywords: Aluminum gallium nitride; Electric fields; Electron gas; Electron mobility; Electronic design automation; Gallium nitride; III-V semiconductors; Silicon; Threshold voltage, 2-D electron gas; AlGaN/GaN high electron mobility transistors; Annealing condition; Breakdown characteristics; High performance devices; High-threshold voltages; Normally off; recess etched, High electron mobility transistors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 02 Mar 2020 10:54
Last Modified: 02 Mar 2020 10:54
URI: http://eprints.iisc.ac.in/id/eprint/64414

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