Epitaxial BaTiO3on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

Vura, S and Jeyaselvan, V and Biswas, R and Raghunathan, V and Selvaraja, SK and Raghavan, S (2021) Epitaxial BaTiO3on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer. In: ACS Applied Electronic Materials, 3 (2). pp. 687-695.

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Abstract

The integration of BaTiO3 with Si(100) is essential to exploit its ferroelectric capabilities in the well-established Si-complementary metal-oxide-semiconductor (CMOS) technological platform. To enable this goal, epitaxial BaTiO3 films with both in-plane and out-of-plane polarization are demonstrated on Si(100) with just a single TiN layer that is also CMOS-compatible. This change in polarization direction is brought about very simply by changing the growth temperature. Piezo force microscopy and optical second-harmonic generation measurements confirm the presence of out-of-plane and in-plane polarization. Films deposited at relatively higher temperatures of 800 °C have polarization lying in-plane at room temperature. The nonlinear dielectric susceptibilities were found to be comparable to the state-of-the-art films integrated with more complex transition schemes. Films deposited at a relatively lower temperature of 600 °C are defective and revert to 800 °C like films on annealing. The defects however confer on them an out-of-plane polarization with a large tetragonality of 1.6% at 500 °C. The changes in anomalous lattice expansion in out-of-plane coupled with coefficient of thermal expansion (CTE) strain result in orientation selection in our films.

Item Type:	Journal Article
Publication:	ACS Applied Electronic Materials
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to American Chemical Society.
Keywords:	Barium titanate; CMOS integrated circuits; Defects; Dielectric devices; Expansion; Metals; MOS devices; Nonlinear optics; Oxide semiconductors; Polarization; Thermal expansion; Titanium nitride, Complementary metal oxide semiconductors; Complex transitions; In-plane polarization; Nonlinear dielectric susceptibilities; Optical second harmonic generation; Piezoforce microscopy; Polarization direction; Technological platform, Silicon compounds
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	01 Dec 2023 02:54
Last Modified:	01 Dec 2023 02:54
URI:	https://eprints.iisc.ac.in/id/eprint/83002

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