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Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.
Soman, Rohith and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Bhat, Navakanta and Raghavan, Srinivasan (2018) Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 124 (24).
Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.
Bardhan, Abheek and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Ghosh, Priyadarshini and Rao, D V Sridhara and Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. In: JOURNAL OF APPLIED PHYSICS, 123 (16).
Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Chandrasekar, Hareesh and Paul, Tathagata and Mohan, Sangeneni and Ghosh, Arindam and Raghavan, Srinivasan and Bhat, Navakanta (2017) Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs. In: ADVANCED ELECTRONIC MATERIALS, 3 (1).
Chandrasekar, Hareesh and Bhat, KN and Rangarajan, Muralidharan and Raghavan, Srinivasan and Bhat, Navakanta (2017) Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces. In: SCIENTIFIC REPORTS, 7 .
Chandrasekar, Hareesh and Nath, Digbijoy N (2016) Electron mobility in few-layer MoxW1-xS2. In: MATERIALS RESEARCH EXPRESS, 2 (9).
Narayanachari, KVLV and Chandrasekar, Hareesh and Banerjee, Amiya and Varma, KBR and Ranjan, Rajeev and Bhat, Navakanta and Raghavan, Srinivasan (2016) Growth stress induced tunability of dielectric permittivity in thin films. In: JOURNAL OF APPLIED PHYSICS, 119 (1).
Bharadwaj, Krishna B and Chandrasekar, Hareesh and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49 (26).
Chandrasekar, Hareesh and Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Bhat, Navakanta and Nath, Digbijoy N (2016) Optical-Phonon-Limited High-Field Transport in Layered Materials. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (2). pp. 767-772.
Chandrasekar, Hareesh and Nath, Digbijoy N (2015) Electron mobility in few-layer MoxW1-xS2. In: MATERIALS RESEARCH EXPRESS, 2 (9).
Chandrasekar, Hareesh and Singh, Manikant and Raghavan, Srinivasan and Bhat, Navakanta (2015) Estimation of background carrier concentration in fully depleted GaN films. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11).
Chandrasekar, Hareesh and Bharadwaj, Krishna B and Vaidyuala, Kranthi Kumar and Suran, Swathi and Bhat, Navakanta and Varma, Manoj and Raghavan, Srinivasan (2015) Spotting 2D atomic layers on aluminum nitride thin films. In: NANOTECHNOLOGY, 26 (42).
Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.
