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Growth stress induced tunability of dielectric permittivity in thin films

Narayanachari, KVLV and Chandrasekar, Hareesh and Banerjee, Amiya and Varma, KBR and Ranjan, Rajeev and Bhat, Navakanta and Raghavan, Srinivasan (2016) Growth stress induced tunability of dielectric permittivity in thin films. In: JOURNAL OF APPLIED PHYSICS, 119 (1).

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Official URL: http://dx.doi.org/10.1063/1.4939466


Stress is inevitable during thin film growth. It is demonstrated here that the growth stress has a significant effect on the dielectric constant of high-k thin films. ZrO2 thin films were deposited on Ge by reactive direct current sputtering. Stress in these films was measured using in-situ curvature measurement tool. The growth stress was tuned from -2.8 to 0.1 GPa by controlling deposition rate. Dielectric permittivity of ZrO2 depends on temperature, phase, and stress. The correct combination of parameters-phase, texture, and stress-is shown to yield films with an equivalent oxide thickness of 8 angstrom. Growth stresses are shown to affect the dielectric constant both directly by affecting lattice parameter and indirectly through the effect on phase stability of ZrO2. (c) 2016 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 17 Feb 2016 05:20
Last Modified: 17 Feb 2016 05:20
URI: http://eprints.iisc.ac.in/id/eprint/53231

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