ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Optical-Phonon-Limited High-Field Transport in Layered Materials

Chandrasekar, Hareesh and Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Bhat, Navakanta and Nath, Digbijoy N (2016) Optical-Phonon-Limited High-Field Transport in Layered Materials. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (2). pp. 767-772.

[img] PDF
IEEE_TRa_Ele_Dev_63_2_767_2016.pdf - Published Version
Restricted to Registered users only

Download (2MB) | Request a copy
Official URL: http://dx.doi.org/10.1109/TED.2015.2508036


An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: 2-D materials; black phosphorus (BP); boron nitride; high-field transport; optical phonons; transition metal dichalcogenides (TMDs)
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 03 Mar 2016 05:18
Last Modified: 03 Mar 2016 05:18
URI: http://eprints.iisc.ac.in/id/eprint/53358

Actions (login required)

View Item View Item