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Electron mobility in few-layer MoxW1-xS2

Chandrasekar, Hareesh and Nath, Digbijoy N (2015) Electron mobility in few-layer MoxW1-xS2. In: MATERIALS RESEARCH EXPRESS, 2 (9).

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Official URL: http://dx.doi.org/10.1088/2053-1591/2/9/095007


Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi's golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in MoxW1-xS2. While impurity scattering limits the mobility for low carrier densities (<2-4x10(12) cm(-2)), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in MoxW1-xS2. The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in MoxW1-xS2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS2 andWS(2).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: transition metal dichalcogenides; MoS2; WS2; mobility; alloys
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 02 Apr 2016 09:49
Last Modified: 02 Apr 2016 09:49
URI: http://eprints.iisc.ac.in/id/eprint/53518

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