Browse by IISc Authors

Conference Paper

Mishra, A and Kumar, BS and Monishmurali, M and Suzaad, SA and Kumar, S and Sanjay, KP and Singh, AK and Gupta, A and Shrivastava, M (2023) Extremely Large Breakdown to Snapback Voltage Offset (V_t1 > > V_BD): Another Way to Improve ESD Resilience of LDMOS Devices. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Mishra, A and Kumar, BS and Somayaji, J and Gupta, A (2022) Geometrically Dependent Space Charge Modulation and Quasi-saturation Effect in Superjunction-LDMOS Device. In: 5th IEEE International Conference on Emerging Electronics, ICEE 2020, 26 - 28 November 2020, New Delhi.

Kranthi, NK and Garg, C and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2020) How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights Design Guidelines for Self-Protected Concepts. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA, USA.

Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M (2019) Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip. In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.

Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2018) Physical insights into the ESD behavior of drain extended FinFETs. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.

Journal Article

Singh, B and Saykar, NG and Kumar, BS and Afria, D and Sangeetha, CK and Rondiya, SR (2024) Unraveling Interface-Driven and Loss Mechanism-Centric Phenomena in 3D/2D Halide Perovskites: Prospects for Optoelectronic Applications. In: ACS Omega, 9 (9). pp. 10000-10016.

Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2020) Physical Insights into the ESD Behavior of Drain Extended FinFETs (DeFinFETs) and Unique Current Filament Dynamics. In: IEEE Transactions on Electron Devices, 67 (7). pp. 2717-2724.