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Ansh, A and Sheoran, G and Kumar, J and Shrivastava, M (2020) First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
Ansh, A and Kumar, J and Sheoran, G and Shrivastava, M (2020) Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors. In: npj 2D Materials and Applications, 4 (1).
Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.
Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.
