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Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .

Kumar, Rakesh P and Mahapatra, Santanu (2010) Analytical modeling of quantum threshold voltage for triple gate MOSFET. In: Solid-State Electronics, 54 (12). pp. 1586-1591.

Sarkar, Sudipta and Roy, Ananda S and Mahapatra, Santanu (2010) Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET. In: Solid-State Electronics, 54 (11). pp. 1421-1429.

Harish, BP and Bhat, Navakanta and Patil, Mahesh B (2006) Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes. In: Solid-State Electronics, 50 (7-8). pp. 1252-1260.

Srinivasaiah, HC and Bhat, Navakanta (2005) Characterization of sub-100nm CMOS process using screening experiment technique. In: Solid-State Electronics, 49 (3). pp. 431-436.

Srinivasaiah, HC and Bhat, Navakanta (2003) Monte Carlo analysis of the implant dose sensitivity in 0.1 &#u00B5;m NMOSFET. In: Solid-State Electronics, 47 (8). pp. 1379-1383.

Saxena, PK and Bhat, N (2003) Process technique for SEU reliability improvement of deep sub-micron SRAM cell. In: Solid-State Electronics, 47 (4). pp. 661-664.

Maitra, K and Bhat, N (2003) Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs. In: Solid-State Electronics, 47 (1). pp. 15-17.

Mukerjee, Subroto and Venkataraman, V (2001) Ellipsometric investigation of strain reduction in $Si_ {1-x-y}Ge_xC_y$ layers compared to $Si_ {1-x}Ge_x$ layers on silicon. In: Solid-State Electronics, 45 (11). pp. 1875-1877.

Hudait, MK and Venkateswarlu, P and Krupanidhi, SB (2001) Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. In: Solid-State Electronics, 45 (1). pp. 133-141.

Hudait, Mantu Kumar and Krupanidhi, SB (2000) Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes. In: Solid-State Electronics, 44 (6). pp. 1089-1097.

Hudai, MK and Krupanidhi, SB (1999) Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes. In: Solid-State Electronics, 43 (12). pp. 2135-2139.

Iyer, Suman B and Kumar, Vikram and Harshavardhan, KS (1991) High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures. In: Solid-State Electronics, 34 (6). 535 -543.

Chattopadhyay, P and Das, Krishna (1991) Control of barrier height of MIS tunnel diodes using deep level impurities. In: Solid-State Electronics, 34 (4). pp. 367-371.

Chattopadhyay, Pabitra (1988) A novel low resistive Metal-Insulator-Semiconductor (MIS) inversion layer solar cell structure. In: Solid-State Electronics, 31 (11). pp. 1641-1643.

Chattopadhyay, P and Kumar, V (1988) Experimental investigation of the dependence of barrier height on metal work function for metal---SiO2---p---Si (MIS) Schottky-barrier diodes in the presence of inversion. In: Solid-State Electronics, 31 (2). pp. 143-146.

Chandra, MM and Suryan, G (1983) Low-intensity differential photocapacitance of MOS structures. In: Solid-State Electronics, 26 (8). pp. 731-737.

Zarab, MJ and Satyam, M (1977) Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers. In: Solid-State Electronics, 20 (5). pp. 407-412.

Chakrabarti, Utpal KR (1977) A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface. In: Solid-State Electronics, 20 (2). pp. 111-112.