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Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.
Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.
Soman, Rohith and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Bhat, Navakanta and Raghavan, Srinivasan (2018) Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 124 (24).
Chaurasia, Saloni and Mohan, Nagaboopathy and Raghavan, Srinivasan and Avasthi, Sushobhan (2018) Wafer-scale epitaxial germanium (100), (111), (110) films on silicon using liquid phase crystallization. In: AIP ADVANCES, 8 (7).
Bardhan, Abheek and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Ghosh, Priyadarshini and Rao, D V Sridhara and Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. In: JOURNAL OF APPLIED PHYSICS, 123 (16).
Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).
Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Krishna, N P Vamsi and Ramesh, Nayana and Mohan, Nagaboopathy and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N and Sen, Prosenjit (2017) Gallium Nitride transistor on glass using epoxy mediated substrate transfer technology. In: 19th IEEE Electronics Packaging Technology Conference (EPTC), DEC 06-09, 2017, Singapore, SINGAPORE.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Bardhan, Abheek and Mohan, Nagaboopathy and Soman, Rohith and Manikant, * and Raghavan, Srinivasan (2016) Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111). In: IETE TECHNICAL REVIEW, 33 (1, SI). pp. 82-87.
Mohan, Nagaboopathy and Manikant, * and Soman, Rohith and Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. In: JOURNAL OF APPLIED PHYSICS, 118 (13).
Mohan, Manikkavalli and Mohan, Nagaboopathy and Chand, Dillip Kumar (2015) Self-assembled gold nanofilms as a simple, recoverable and recyclable catalyst for nitro-reduction. In: JOURNAL OF MATERIALS CHEMISTRY A, 3 (42). pp. 21167-21177.
Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.
