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Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

Mohan, Nagaboopathy and Manikant, * and Soman, Rohith and Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. In: JOURNAL OF APPLIED PHYSICS, 118 (13).

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Official URL: http://dx.doi.org/10.1063/1.4932148


AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 x 10(9)/cm(2) and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600-1900 cm(2)/V s at a carrier concentration of 0.7-0.9 x 10(13)/cm(2). Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner. (C) 2015 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 05 Nov 2015 06:49
Last Modified: 05 Nov 2015 06:49
URI: http://eprints.iisc.ac.in/id/eprint/52675

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