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Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.
Munshi, MA and Mir, MA and Malik, R and Joshi, V and Chaudhuri, RR and Khan, Z and Shrivastava, M (2023) Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs. In: UNSPECIFIED.
Jhnanesh Somayaji, B and Monishmurali, M and Ajay Singh, N and Kranthi, K and Shrivastava, M (2020) 3D TCAD studies of snapback driven failure in punch-through TVS diodes under system level esd stress conditions. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.
Kranthi, NK and Di Sarro, J and Sankaralingam, R and Boselli, G and Shrivastava, M (2020) Insights into the system-level IEC ESD failure in high voltage DeNMOS-SCR for automotive applications. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.
Kumar, BS and Paul, M and Gossner, H and Shrivastava, M (2018) Physical insights into the ESD behavior of drain extended FinFETs. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.
Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.
